Yin Wang


(1) Y. Wang*, Z. Yu, F. Zahid, L. Liu, Y. Zhu, J. Wang, and H. Guo, Direct tunneling through high-K amorphous HfO2: Effects of chemical modification, J. Appl. Phys. 116, 023703 (2014).

(2)Y. Wang*, H. Yin*, R. Cao*, F. Zahid, Y. Zhu, L. Liu, J. Wang, and H. Guo, Electronic structures of III-V zinc-blende semiconductors from first principles, Phys. Rev. B 87, 235203 (2013).

(3)Y. Wang*, F. Zahid, Y. Zhu, L. Liu, J. Wang, and H. Guo, Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first principles, Appl. Phys. Lett. 102, 132109 (2013).

(4)Y. Wang*, F. Zahid, J. Wang, and H. Guo, Structures and Dielectric Properties of Amorphous High-K Oxides: HfO2, ZrO2 and their alloys, Phys. Rev. B 85, 224110 (2012).

(5)M. Chen, Z. Yu, Y. Wang*, Y. Xie*, J. Wang, and H. Guo, Nonequilibrium spin injection in monolayer black phosphorus, Phys. Chem. Chem. Phys. 18, 1601 (2016).

(6)M. Chen, Z. Yu, Y. Xie*, Y. Wang*, Spin-polarized quantum transport properties through flexible phosphorene, Appl. Phys. Lett. 109, 142409 (2016).

(7)J.W. Li, B. Wang*, Y. Yu, Y.D. Wei, Z.Z. Yu, and Y. Wang*, Spin-resolved quantum transport in graphene-based nanojunctions, Front. Phys. 12, 126501 (2017).

(8)J. Zhuang, Y. Wang*, Y. Zhou*, J. Wang, and H. Guo, Impurity-limited quantum transport variability in magnetic tunnel junctions, Front. Phys. 12, 127304 (2017).

(9)H. Yin, J. Chen, Y. Wang*, J. Wang, and H. Guo, Composition dependent band offset of ZnO and its ternary alloys, Sci. Rep. 7, 41567 (2017).

(10)Z. Zhu, J. Xiao, H. Sun, Y. Hu, R. Cao, Y. Wang, L. Zhao*, and J. Zhuang*, Composition-dependent band gaps and indirect-direct band gap transitions of group-IV semiconductor alloys, Phys. Chem. Chem. Phys. 17, 21605 (2015).

(11)J. Zhou, W. Zhao*, Y. Wang, S. Peng, J. Qiao, L. Su, L. Zeng, N. Lei, L. Liu, Y. Zhang, and A. Bournel, Appl. Phys. Lett. 109, 242403 (2016).